Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapor deposition
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Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapor deposition Wenjuan Zhu, Tony Low, Yi-Hsien Lee, Han Wang, Damon B. Farmer, Jing Kong, Fengnian Xia and Phaedon Avouris 1 IBM Thomas J. Watson Research Center, Yorktown heights, NY 10598, USA National Tsing Hua University, Hsinchu, 30013, Taiwan Massachusetts Institute of Technology, Boston, MA 02139, USA Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
منابع مشابه
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition.
Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have hi...
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تاریخ انتشار 2014